The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 23, 2021
Filed:
Aug. 14, 2019
Applicant:
Nanya Technology Corporation, New Taipei, TW;
Inventor:
Chin-Te Kuo, New Taipei, TW;
Assignee:
NANYA TECHNOLOGY CORPORATION, New Taipei, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 21/768 (2006.01); H01L 23/31 (2006.01); H01L 21/56 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0649 (2013.01); H01L 21/56 (2013.01); H01L 21/7682 (2013.01); H01L 21/76885 (2013.01); H01L 23/3157 (2013.01);
Abstract
The present disclosure provides a semiconductor structure having an air gap dielectric and a method for preparing the semiconductor structure. The method includes forming a conductive pillar over a substrate; forming a dielectric cap over the conductive pillar; transforming a sidewall portion of the conductive pillar into a first dielectric portion; and removing the first dielectric portion such that a width of the dielectric cap is greater than a width of a remaining portion of the conductive pillar.