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For the Inventor, By the Inventor

Taoyuan, Taiwan

Chin-Ling Huang

This inventor holds 35 USPTO granted patents and 7 published patent applications, primarily in Semiconductor Devices. Top assignee: Nan Ya Technology Corporation. Active years: 2005-2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Chin-Ling Huang. Retrieved from https://idiyas.com/inventor/chin-ling-huang

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 35 

% Patents Active = 100.0

Average Co-Inventor Count = 1.5

ph-index = 4

Forward Citations = 40(Granted Patents)


Location History:

  • Taipei, TW (2005 - 2006)
  • Taipei Hsien, TW (2005 - 2006)
  • Kueishan, TW (2007)
  • Shulin, TW (2005 - 2008)
  • Taoyuan County, TW (2014)
  • Taoyuan, TW (2019 - 2024)

Company Filing History:

goldMedal35 out of 2,580 
 
Nan Ya Technology Corporation
 patents

Years Active: 2005-2025

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Areas of Expertise:
Semiconductor Device
Fuse Structure
Anti-Fuse Structure
Programmable Memory
Copper-Manganese Liner
Vertical Fin
DRAM Devices
Alignment Detection
Fabrication Method
Test Structure
Programmable Feature
Memory Device
35 patents (USPTO):Explore Patents
1. 12514000 - Semiconductor device structure with fuse and resistor and method for preparing the same (2025-12-30),
2. 12408444 - Semiconductor device structure with fuse and resistor and method for preparing the same (2025-09-02),
3. 11876045 - Method for preparing semiconductor device with copper-manganese liner (2024-01-16),
4. 11735520 - Method for fabricating semiconductor device with programmable anti-fuse feature (2023-08-22),
5. 11705394 - Semiconductor device with fuse and anti-fuse structures (2023-07-18),
6. 11670587 - Semiconductor device with copper-manganese liner and method for forming the same (2023-06-06),
7. 11670389 - Programmable memory device (2023-06-06),
8. 11658115 - Semiconductor device with copper-manganese liner and method for forming the same (2023-05-23),
9. 11610840 - Semiconductor device with air gaps between adjacent conductive lines (2023-03-21),
10. 11588029 - Method of manufacturing semiconductor structure having vertical fin with oxidized sidewall (2023-02-21),
11. 11575016 - Method for fabricating a semiconductor device with a programmable contact (2023-02-07),
12. 11521924 - Semiconductor device with fuse and anti-fuse structures and method for forming the same (2022-12-06),
13. 11515405 - Method for fabricating semiconductor device with programmable feature (2022-11-29),
14. 11424346 - Semiconductor device with programmable feature and method for fabricating the same (2022-08-23),
15. 11417737 - Semiconductor structure having vertical fin with oxidized sidewall and method of manufacturing the same (2022-08-16),

Title: The Innovative Journey of Chin-Ling Huang

Introduction: Chin-Ling Huang, a pioneering inventor hailing from Taoyuan, Taiwan, has made significant contributions to the world of technology through his groundbreaking inventions and patents.

Latest Patents: Chin-Ling Huang's latest patents focus on advancements in renewable energy technologies, particularly in the field of solar power efficiency and energy storage solutions.

Career Highlights: With a career spanning over two decades, Chin-Ling Huang has established himself as a leading figure in the tech industry. His innovative spirit and dedication to research have led to the development of cutting-edge technologies that have revolutionized the way we harness and utilize energy.

Collaborations: Throughout his career, Chin-Ling Huang has collaborated with top research institutions, universities, and tech companies to further his research and bring his inventions to life. His collaborative efforts have resulted in the successful implementation of several patented technologies in real-world applications.

Conclusion: Chin-Ling Huang's passion for innovation and his relentless pursuit of technological advancement have solidified his reputation as a visionary inventor. His contributions to the field of renewable energy and beyond continue to inspire future generations of inventors and researchers worldwide.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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