The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 02, 2025

Filed:

May. 05, 2023
Applicant:

Nanya Technology Corporation, New Taipei, TW;

Inventor:

Chin-Ling Huang, Taoyuan, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 89/60 (2025.01); H01L 23/522 (2006.01); H01L 23/525 (2006.01); H01L 23/528 (2006.01); H01L 23/64 (2006.01);
U.S. Cl.
CPC ...
H10D 89/911 (2025.01); H01L 23/5226 (2013.01); H01L 23/5256 (2013.01); H01L 23/528 (2013.01); H01L 23/647 (2013.01);
Abstract

A semiconductor device structure includes an isolation structure disposed in a semiconductor substrate. The semiconductor device structure also includes a fuse and a resistor electrode disposed in the semiconductor substrate. The isolation structure is disposed between the fuse and the resistor electrode, and the isolation structure is closer to the resistor electrode than the fuse. The semiconductor device structure further includes a source/drain (S/D) region disposed in the semiconductor substrate and between the fuse and the isolation structure. The S/D region is electrically connected to the resistor electrode.


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