The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 06, 2023
Filed:
Sep. 30, 2021
Nanya Technology Corporation, New Taipei, TW;
Chin-Ling Huang, Taoyuan, TW;
NANYA TECHNOLOGY CORPORATION, New Taipei, TW;
Abstract
The present application provides a programmable memory device. The programmable memory device includes: an access transistor, comprising an active region formed in a substrate and a gate structure formed on the substrate, wherein the active region has a linear top view shape, the gate structure has a first portion and a second portion, the first portion is intersected with a section of the active region away from end portions of the active region, and the second portion is laterally spaced apart from the active region; and a capacitor, using a portion of the active region as a terminal, and further comprising an electrode and a dielectric layer, wherein the electrode is disposed on the portion of the active region and spaced apart from the gate structure, and at least a portion of the dielectric layer is sandwiched between the electrode and the portion of the active region.