The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 22, 2023
Filed:
Sep. 30, 2021
Applicant:
Nanya Technology Corporation, New Taipei, TW;
Inventor:
Chin-Ling Huang, Taoyuan, TW;
Assignee:
NANYA TECHNOLOGY CORPORATION, New Taipei, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/525 (2006.01); H01L 21/762 (2006.01);
U.S. Cl.
CPC ...
H01L 23/5252 (2013.01); H01L 21/76224 (2013.01);
Abstract
The present application discloses a method for fabricating a semiconductor device. The method includes providing a substrate, forming a peak portion on the substrate, forming a gate insulating layer on the substrate and the peak portion, forming a gate bottom conductive layer on the gate insulating layer, and forming a first doped region in the substrate and adjacent to one end of the gate insulating layer.
Huang, Chin-Ling. (2023). Method for fabricating semiconductor device with programmable anti-fuse feature (U.S. Patent No. 11735520). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11735520
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile