Chih-Yang Hsu

Title: Innovations of Chih-Yang Hsu in Memory Device Technology

Introduction

Chih-Yang Hsu is a prominent inventor based in Tainan, Taiwan. He has made significant contributions to the field of memory device technology, holding three patents that showcase his innovative approach to non-volatile memory devices. His work has implications for improving the performance and reliability of memory storage solutions.

Latest Patents

One of Hsu's latest patents is titled "Method of programming MLC memory device and related MLC memory device." This invention involves measuring the disturb characteristics of a program block with multiple memory cells. By acquiring threshold voltage variations based on these characteristics, Hsu's method provides multiple initial program voltage pulses according to a predetermined signal level. It then adjusts these pulses to output compensated program voltage pulses for programming the memory cells effectively.

Another notable patent is "Non-volatile memory device and method for fabricating the same." This invention describes a non-volatile memory device that includes a substrate with shallow trench isolation (STI) lines. A memory gate structure is positioned between these STI lines, and a trench line intersects them, facilitating the coupling of a conductive line as a selection line to the memory gate structure. This design enhances the functionality and efficiency of non-volatile memory devices.

Career Highlights

Chih-Yang Hsu is currently employed at United Microelectronics Corporation, where he continues to develop innovative memory solutions. His expertise in memory technology has positioned him as a key player in the industry, contributing to advancements that benefit various applications.

Collaborations

Hsu has collaborated with notable colleagues, including Chia-Wen Wang and Chien-Hung Chen. These partnerships have fostered a collaborative environment that encourages the exchange of ideas and innovation in memory technology.

Conclusion

Chih-Yang Hsu's contributions to memory device technology through his patents reflect his commitment to innovation and excellence. His work not only advances the field but also sets a foundation for future developments in non-volatile memory solutions.