The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 11, 2016
Filed:
Jan. 12, 2016
United Microelectronics Corporation, Hsinchu, TW;
Kuo-Lung Li, Erlun Township, TW;
Ping-Chia Shih, Tainan, TW;
Hsiang-Chen Lee, Kaohsiung, TW;
Yu-Chun Chang, Taichung, TW;
Chia-Wen Wang, Tainan, TW;
Meng-Chun Chen, Kaohsiung, TW;
Chih-Yang Hsu, Tainan, TW;
UNITED MICROELECTRONICS CORPORATION, Hsinchu, TW;
Abstract
The invention provides a method for fabricating a silicon-oxide-nitride-oxide-silicon (SONOS) non-volatile memory cell, comprising: (S) forming a pad oxide pattern on a silicon substrate having a recess exposing a tunnel region of the silicon substrate; (S) forming a bottom oxide layer, a nitride layer, a top oxide layer covering the recess and the pad oxide pattern to form a first ONO structure; (S) forming a photoresist on the first ONO structure covering the recess and a peripheral region of the pad oxide pattern; (S) removing a part of the first ONO structure exposed by the photoresist to form an U-shaped ONO structure; (S) trimming the photoresist to exposed a part of the U-shaped ONO structure above the recess; (S) removing the part of the U-shaped ONO structure; (S) removing the photoresist; (S) removing the pad oxide pattern and the top oxide layer; and (S) forming a gate structure.