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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12119053 B1

PDFFull Text
Date of Patent:
Oct. 15, 2024

Filed:

Feb. 24, 2022

Method of programming mlc memory device and related mlc memory device

Applicant:

United Microelectronics Corp., Hsin-Chu, TW;

Inventors:

Chia-Wen Wang, Tainan, TW;

Chien-Hung Chen, Hsin-Chu, TW;

Chia-Hui Huang, Tainan, TW;

Jen-Yang Hsueh, Tainan, TW;

Ling-Hsiu Chou, Tainan, TW;

Chih-Yang Hsu, Tainan, TW;

Assignee:

UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;

Attorney:

Winston Hsu

Primary Examiner:

Alexander Sofocleous

Assistant Examiner:

Tracy Hampton

Int. Cl.
CPC ...
G11C 16/10 (2006.01); G11C 11/56 (2006.01); G11C 16/34 (2006.01); G11C 16/04 (2006.01);
U.S. Cl.
CPC ...
G11C 11/5628 (2013.01); G11C 16/10 (2013.01); G11C 16/3427 (2013.01); G11C 16/3459 (2013.01); G11C 16/0483 (2013.01);
Abstract

When programming an MLC memory device, the disturb characteristics of a program block having multiple memory cells are measured, and the threshold voltage variations of the multiple memory cells are then acquired based on the disturb characteristics of the program block. Next, multiple initial program voltage pulses are provided according to a predetermined signal level, and multiple compensated program voltage pulses are provided by adjusting the multiple initial program voltage pulses. Last, the multiple compensated program voltage pulses are outputted to the program block for programming the multiple memory cells to the predetermined signal level.

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Wang, Chia-Wen. (2024). Method of programming mlc memory device and related mlc memory device (U.S. Patent No. 12119053). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12119053

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