The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 27, 2026
Filed:
Oct. 25, 2023
United Microelectronics Corp., Hsinchu, TW;
Chia-Wen Wang, Tainan City, TW;
Chien-Hung Chen, Hsinchu City, TW;
Chia-Hui Huang, Tainan City, TW;
Ling Hsiu Chou, Tainan City, TW;
Jen Yang Hsueh, Tainan City, TW;
Chih-Yang Hsu, Tainan City, TW;
United Microelectronics Corp., Hsinchu, TW;
Abstract
Provided are a memory structure and a manufacturing method thereof. The memory structure includes a substrate having first and second regions, first and second isolation structures in the substrate, a charge storage layer on the substrate, first and second gates and doped regions. The first isolation structures define first active areas in the first region. A top surface of the first isolation structure is higher than that of the substrate. The second isolation structures define second active areas in the second region. A top surface of the second isolation structure is lower than that of the substrate. The first gate is on the charge storage layer in the first active area. The second gate is on the charge storage layer in the second active area. The doped regions are in the substrate at two sides of the first gate and at two sides of the second gate.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile