Company Filing History:
Years Active: 2022
Title: Jen Yang Hsueh - Innovator in Memory Structure Manufacturing
Introduction
Jen Yang Hsueh is an inventor based in Tainan City, Taiwan. He has made significant contributions to the field of memory structure manufacturing. His innovative approach focuses on enhancing the efficiency and effectiveness of memory structures.
Latest Patent Applications
Jen Yang Hsueh has filed a patent application titled "Manufacturing Method of Memory Structure." This application describes a memory structure that includes a substrate, a first doped region, a second doped region, a first gate, a second gate, a first charge storage structure, and a second charge storage structure. The first gate is positioned on the first doped region, while the second gate is located on the second doped region. The first charge storage structure is situated between the first gate and the first doped region, comprising a first tunneling dielectric layer, a first dielectric layer, and a first charge storage layer. Similarly, the second charge storage structure is located between the second gate and the second doped region, consisting of a second tunneling dielectric layer, a second dielectric layer, and a second charge storage layer. Notably, the thickness of the second tunneling dielectric layer is greater than that of the first tunneling dielectric layer.
Conclusion
Jen Yang Hsueh's work in memory structure manufacturing showcases his innovative spirit and dedication to advancing technology. His contributions, although not yet reflected in granted patents, hold promise for future developments in the field.