United Microelectronics Corp.

Jen Yang Hsueh

Chien-Hung Chen

Chia-Wen Wang

Chia-Hui Huang

Chih-Yang Hsu

Ling Hsiu Chou

A non-volatile memory device includes a substrate. A plurality of shallow trench isolation (STI) lines are disposed on the substrate and extend along a first direction. A memory gate structure is disposed on the substrate between adjacent two of the plurality of STI lines. A trench line is disposed in the substrate and extends along a second direction intersecting the first direction, wherein the trench line also crosses top portions of the plurality of STI lines. A conductive line is disposed in the trench line and used as a selection line to be coupled to the memory gate structure.

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Tainan, Taiwan

Jen Yang Hsueh