IDiyas

For the Inventor, By the Inventor

Hsinchu, Taiwan

Chia-Jung Yu

USPTO Granted Patents = 20 

Average Co-Inventor Count = 4.3

ph-index = 1

Forward Citations = 7(Granted Patents)


Company Filing History:

goldMedal20 out of 40,635 
 
Taiwan Semiconductor Manufacturing Comp. Ltd.
 patents

Years Active: 2023-2025

Loading Chart...
20 patents (USPTO):
1. 12419057 - Semiconductor device, integrated circuit and method of manufacturing the same (2025-09-16),
2. 12349368 - Memory device including a semiconducting metal oxide fin transistor and methods of forming the same (2025-07-01),
3. 12336187 - Mobility enhancement by source and drain stress layer or implantation in thin film transistors (2025-06-17),
4. 12315762 - Self-aligned lines and methods for fabricating the same (2025-05-27),
5. 12219780 - High-density memory device with planar thin film transistor (TFT) selector and methods for making the same (2025-02-04),
6. 12219778 - Multi-gate selector switches for memory cells and methods of forming the same (2025-02-04),
7. 12218252 - Semiconductor structure with source and drain electrode embedded within semiconductor layer and manufacturing method thereof (2025-02-04),
8. 12133396 - Semiconductor device, integrated circuit and method of manufacturing the same (2024-10-29),
9. 12125921 - Semiconducting metal oxide transistors having a patterned gate and methods for forming the same (2024-10-22),
10. 12114511 - Semiconductor device, integrated circuit and method of manufacturing the same (2024-10-08),
11. 12074219 - Back channel field effect transistors using a pull back process and methods for forming the same (2024-08-27),
12. 12058873 - Memory device including a semiconducting metal oxide fin transistor and methods of forming the same (2024-08-06),
13. 11996405 - Memory device, semiconductor die, and method of fabricating the same (2024-05-28),
14. 11968840 - Tri-gate transistor and methods for forming the same (2024-04-23),
15. 11825661 - Mobility enhancement by source and drain stress layer of implantation in thin film transistors (2023-11-21),

Title: The Innovative Journey of Chia-Jung Yu

Introduction: Chia-Jung Yu, a pioneering inventor hailing from Hsinchu, Taiwan, has made significant contributions to the world of technology and innovation through his groundbreaking inventions.

Latest Patents: Chia-Jung Yu holds several patents in the field of semiconductor technology, including a recent patent for a novel method of enhancing chip performance through advanced materials integration.

Career Highlights: With a career spanning over two decades, Chia-Jung Yu has worked with leading tech companies in Taiwan, driving innovation and pushing the boundaries of semiconductor design. His expertise in materials science and chip architecture has led to the development of cutting-edge technologies that have revolutionized the industry.

Collaborations: Throughout his career, Chia-Jung Yu has collaborated with top research institutions and universities, fostering a culture of innovation and knowledge sharing. His partnerships have resulted in the successful commercialization of several groundbreaking inventions, further solidifying his reputation as a visionary inventor.

Conclusion: Chia-Jung Yu's relentless pursuit of innovation and his passion for pushing the limits of technology have cemented his legacy as a trailblazing inventor in the field of semiconductor design. His contributions continue to inspire future generations of inventors and shape the landscape of technological advancement.

This text is generated by artificial intelligence and may not be accurate.
Please report any incorrect information to support@idiyas.com
Loading…