The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 29, 2024

Filed:

Aug. 30, 2021
Applicant:

Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;

Inventors:

Chia-Jung Yu, Hsinchu, TW;

Pin-Cheng Hsu, Hsinchu County, TW;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H10B 61/00 (2023.01); H10K 10/46 (2023.01);
U.S. Cl.
CPC ...
H10B 61/22 (2023.02); H10K 10/46 (2023.02);
Abstract

A semiconductor device, an integrated circuit, and a method of manufacturing the same are provided. The semiconductor device includes a substrate, a thin-film transistor (TFT) over the substrate, and a magnetoresistive random-access memory (MRAM) cell electrically coupled to the TFT. The TFT includes a gate electrode; an active layer disposed above the gate electrode; source/drain electrodes disposed above the gate electrode and separated by the active layer; and at least two dielectric layers disposed between the gate electrode and the source/drain electrodes.


Find Patent Forward Citations

Loading…