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For the Inventor, By the Inventor

Quanzhou, China

Chao-Wei Lin

This inventor holds 5 USPTO granted patents. Top assignee: Fujian Jinhua Integrated Circuit Co., Ltd.. Active years: 2024-2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Chao-Wei Lin. Retrieved from https://idiyas.com/inventor/chao-wei-lin-lwuiaft2

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 5

% Patents Active = 100.0

Average Co-Inventor Count = 4.1

ph-index = 1


Company Filing History:

goldMedal5 out of 354 
 
Fujian Jinhua Integrated Circuit Co., Ltd.
 patents

Years Active: 2024-2025

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5 patents (USPTO):Explore Patents
1. 12444455 - Memory structure (2025-10-14),
2. 12408331 - Memory device and manufacturing method thereof (2025-09-02),
3. 12237369 - Semiconductor device with shallow trench isolation having multi-stacked layers and method of forming the same (2025-02-25),
4. 12100617 - Method of manufacturing semiconductor memory device (2024-09-24),
5. 12069851 - Transistor, memory and method of forming same (2024-08-20),

Title: Chao-Wei LIN: Innovator from Fujian, CN

Introduction: Chao-Wei LIN is a renowned inventor hailing from Fujian, China, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Chao-Wei LIN holds several patents in the areas of artificial intelligence, renewable energy, and sustainable technologies, showcasing his commitment to creating solutions for the future.

Career Highlights: With a career spanning over two decades, Chao-Wei LIN has worked with leading research institutions and technology companies, where he has spearheaded projects that have revolutionized industries.

Collaborations: Throughout his career, Chao-Wei LIN has collaborated with top scientists, engineers, and researchers from around the world, fostering a culture of innovation and knowledge-sharing.

Conclusion: Chao-Wei LIN's passion for innovation and his relentless pursuit of excellence continue to inspire the next generation of inventors and entrepreneurs in Fujian, China, and beyond.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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