Changhyun Lee

Title: Changhyun Lee: Innovator in Memory Device Technology

Introduction

Changhyun Lee is a prominent inventor based in Boise, ID (US), known for his significant contributions to memory device technology. With a total of 13 patents to his name, Lee has made remarkable advancements in the field of programming memory cells.

Latest Patents

One of his latest patents involves programming memory cells at two different levels in parallel. This innovation includes a memory device with an array of multiple-level memory cells and a controller. The controller is designed to program these memory cells through a multiple-pass programming operation. In this operation, lower page data is programmed in the first pass, while higher page data is programmed in the second pass. This allows memory cells intended for higher levels to be programmed simultaneously with those for lower levels. Another notable patent focuses on a memory device that includes multiple select gates and different bias conditions. This design features first and second select gates connected in series between a conductive line and a first memory cell string, along with third and fourth select gates for a second memory cell string. The device is capable of applying different voltages to these select gates during operation.

Career Highlights

Changhyun Lee has worked with leading technology companies, including Micron Technology Incorporated and Intel Corporation. His experience in these organizations has greatly influenced his innovative work in memory devices.

Collaborations

Lee has collaborated with notable professionals in the field, including Akira Goda and Haitao Liu. Their joint efforts have contributed to the advancement of memory technology.

Conclusion

Changhyun Lee's work in memory device technology showcases his innovative spirit and dedication to advancing the field. His patents reflect a deep understanding of memory systems and their potential for future development.