The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 23, 2019

Filed:

Jul. 16, 2018
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Akira Goda, Boise, ID (US);

Haitao Liu, Boise, ID (US);

Changhyun Lee, Boise, ID (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/26 (2006.01); G11C 16/04 (2006.01); G11C 16/16 (2006.01); G11C 16/10 (2006.01); G11C 11/56 (2006.01); G11C 16/08 (2006.01); G11C 16/34 (2006.01); H01L 27/105 (2006.01); H01L 27/115 (2017.01); H01L 49/02 (2006.01);
U.S. Cl.
CPC ...
G11C 16/0483 (2013.01); G11C 11/5628 (2013.01); G11C 16/08 (2013.01); G11C 16/10 (2013.01); G11C 16/16 (2013.01); G11C 16/26 (2013.01); G11C 16/3459 (2013.01); H01L 27/1052 (2013.01); H01L 27/115 (2013.01); H01L 28/00 (2013.01);
Abstract

Some embodiments include apparatuses and methods using first and second select gates coupled in series between a conductive line and a first memory cell string of a memory device, and third and fourth select gates coupled in series between the conductive line and a second memory cell string of the memory device. The memory device can include first, second, third, and fourth select lines to provide first, second, third, and fourth voltages, respectively, to the first, second, third, and fourth select gates, respectively, during an operation of the memory device. The first and second voltages can have a same value. The third and fourth voltages can have different values.


Find Patent Forward Citations

Loading…