The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 08, 2019

Filed:

Jul. 01, 2017
Applicant:

Intel Corporation, Santa Clara, CA (US);

Inventor:

Changhyun Lee, Boise, ID (US);

Assignee:

Intel Corporation, Santa Clara, CA (US);

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 16/34 (2006.01); G11C 16/10 (2006.01); G11C 11/56 (2006.01);
U.S. Cl.
CPC ...
G11C 16/3427 (2013.01); G11C 11/5628 (2013.01); G11C 16/10 (2013.01);
Abstract

Technology for a memory device is described. The memory device can include a plurality of memory cells and a memory controller. The memory controller can apply a first voltage level to a selected wordline associated with the plurality of memory cells during a body reset operation. The memory controller can apply a second voltage level to an unselected wordline associated with the plurality of memory cells during the body reset operation. The selected wordline can transit to a stable negative pillar potential, such that selected memory cells associated with the selected wordline can have a reduced threshold voltage instability.


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