Taipei, Taiwan

Chan Syun David Yang

This inventor holds 9 USPTO granted patents and 1 published patent application. Top assignee: Taiwan Semiconductor Manufacturing Comp. Ltd.. Active years: 2016-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Chan Syun David Yang. Retrieved from https://idiyas.com/inventor/chan-syun-david-yang

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 9 

% Patents Active = 88.9

Average Co-Inventor Count = 1.6

ph-index = 2

Forward Citations = 21(Granted Patents)


Location History:

  • Shinchu, TW (2020)
  • Taipei, TW (2016 - 2021)
  • Hsinchu, TW (2024)

Company Filing History:


Years Active: 2016-2026

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9 patents (USPTO):Explore Patents

Title: Innovations of Chan Syun David Yang

Introduction

Chan Syun David Yang is a prominent inventor based in Taipei, Taiwan. He has made significant contributions to the field of semiconductor technology, holding a total of 9 patents. His work focuses on advanced semiconductor devices and manufacturing methods, which are crucial for the development of modern electronic components.

Latest Patents

One of his latest patents is titled "Semiconductor device and method of manufacture." This patent describes a semiconductor device, such as a fin field effect transistor, and outlines its manufacturing process. The method includes forming gate spacers over a semiconductor fin and creating a first gate stack over the fin. Additionally, a first sacrificial material with a large selectivity to the gate spacers is formed over the gate stack, along with a second sacrificial material over a source/drain contact plug. The process utilizes etching techniques to create openings filled with a conductive material.

Another notable patent is "Air gap spacer and related methods." This invention details a method for forming an air-gap spacer in a semiconductor device. It involves providing a device with a gate stack and multiple spacer layers on the sidewall of the gate stack. The method includes removing a first spacer layer to create an air gap and depositing sealing layers to form a sealed air gap. The first self-aligned contact layer is then etched from over the source/drain feature using a selective etching process.

Career Highlights

Chan Syun David Yang is currently employed at Taiwan Semiconductor Manufacturing Company Limited, a leading firm in the semiconductor industry. His expertise and innovative approaches have significantly impacted the company's advancements in semiconductor technology.

Collaborations

Throughout his career, Chan has collaborated with notable colleagues, including Li-Te S Lin and Chun-Jui Huang. These partnerships have fostered a collaborative environment that enhances the development of cutting-edge semiconductor technologies.

Conclusion

Chan Syun David Yang's contributions to semiconductor technology through his patents and collaborations highlight his role as a key innovator in the field. His work continues to influence the advancement of electronic devices and manufacturing processes.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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