The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 29, 2020
Filed:
May. 03, 2019
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-chu, TW;
Chan Syun David Yang, Shinchu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Abstract
In some embodiments, a semiconductor device is provided. The semiconductor device includes a first semiconductor fin that extends from a substrate. The first semiconductor fin has source and drain regions, which are separated from one another by a channel region in the first semiconductor fin. A gate overlies an upper surface and sidewalls of the channel region. A contact is coupled to the source or drain region of the first semiconductor fin, where the source or drain region includes a layer of epitaxial material with a substantially diamond-shaped cross-section. The contact surrounds the source or drain region on top and bottom surfaces of the substantially diamond-shaped cross-section. A first capping material is arranged along outer sidewalls of the first semiconductor fin under the contact. The first capping material has an uppermost surface that is spaced below a lowermost surface of the contact by a non-zero distance.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile