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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9472414 B1

PDFFull Text
Expired
Date of Patent:
Oct. 18, 2016

Filed:

Feb. 13, 2015

Self-aligned multiple spacer patterning process

Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;

Inventors:

Chan Syun David Yang, Taipei, TW;

Chao-Cheng Chen, Hsin-Chu, TW;

Chien-Hao Chen, Chuangwei Township, TW;

Chun-Hung Lee, Hsin-Chu, TW;

De-Fang Chen, Hsin-Chu, TW;

Assignee:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;

Attorney:

Slater Matsil, LLP

Primary Examiner:

Roberts Culbert

Int. Cl.
CPC ...
B44C 1/22 (2006.01); C03C 15/00 (2006.01); C03C 25/68 (2006.01); C23F 1/00 (2006.01); H01L 21/308 (2006.01); H01L 29/66 (2006.01); H01L 21/3065 (2006.01); H01L 21/02 (2006.01); H01L 21/8234 (2006.01);
U.S. Cl.
CPC ...
H01L 21/3088 (2013.01); H01L 21/0206 (2013.01); H01L 21/3065 (2013.01); H01L 21/3081 (2013.01); H01L 21/3086 (2013.01); H01L 21/823431 (2013.01); H01L 29/6653 (2013.01);
Abstract

Embodiments of the present disclosure are a method of forming a semiconductor device and methods of patterning a semiconductor device. An embodiment is a method of forming a semiconductor device, the method including pattering a mandrel layer disposed over a semiconductor device layer to form a mandrel, forming a first set of spacers on sidewalls of the mandrel using a first material, selectively removing the mandrel disposed between the first set of spacers. The method further includes after removing the mandrel, using the first set of spacers as a first set of mandrels, forming a second set of spacers on sidewalls of the first set of mandrels using a second material, the second material having a different etch selectivity from the etch selectivity of the first material, the second set of spacers have substantially flat top surfaces, and selectively removing the first set of mandrels disposed between the second set of spacers.

Find Patent Forward Citations

Yang, Chan Syun David. (2016). Self-aligned multiple spacer patterning process (U.S. Patent No. 9472414). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9472414

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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