Company Filing History:
3 out of 1,339 
3 out of 40 
2 out of 3 
Years Active: 1990-2009
Title: **Innovator Spotlight: Chan-Sui Pang**
Introduction
Chan-Sui Pang is a prominent inventor based in Sunnyvale, California, recognized for his significant contributions to the field of non-volatile memory technologies. With a total of 11 patents to his name, he has demonstrated an exceptional ability to innovate and advance the technology landscape, particularly in memory systems.
Latest Patents
One of his latest patents focuses on "Word line compensation in non-volatile memory erase operations." This innovative approach involves applying compensation voltages to a non-volatile memory system during erase operations to equalize the erase behavior of memory cells. The compensation voltages not only help in normalizing the erase behavior of memory cells but also target both end and interior memory cells within a NAND string. By equalizing the erase behavior across different memory cells, this patent enhances the reliability and efficiency of memory operations.
Career Highlights
Throughout his career, Chan-Sui Pang has worked with notable organizations such as SanDisk Corporation and Catalyst Semiconductor, Inc. His experiences in these companies have fostered his growth as a leading inventor in the memory technology sector, enabling him to pioneer advancements that have far-reaching implications for data storage solutions.
Collaborations
Chan-Sui has collaborated with esteemed professionals like Yueh Yale Ma and Jeffrey W Lutze. Working alongside such accomplished colleagues has allowed him to share insights, spark discussions, and cultivate innovative ideas that drive progress in technological capabilities.
Conclusion
With his wealth of knowledge and innovative spirit, Chan-Sui Pang continues to pave the way for advancements in memory technologies. His latest work on word line compensation highlights his commitment to enhancing the performance of non-volatile memory systems. As his career progresses, his contributions will undoubtedly shape the future of memory solutions in significant ways.