The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 30, 2004
Filed:
Oct. 24, 2002
Yueh Yale Ma, Los Altos Hills, CA (US);
Chan-Sui Pang, Sunnyvale, CA (US);
Other;
Abstract
A four-terminal dual-bit double polysilicon source-side injection flash EEPROM cell, capable of storing two bits of information includes a right junction (which can serve as a cell drain or a source), a left junction (which can serve as a cell source or drain), a select-gate, and two floating gates. The two floating gates are insulated from the select-gate by an inter gate dielectric. The inter-gate dielectric has a “weak region” so that during erase mode electrons can tunnel from the floating gate to the select-gate. The two bits in the cell are to be separately read or programmed, but are to be erased simultaneously. Programming of each bit is achieved through hot-carrier injection, while simultaneous erase of the two bits is achieved through electron tunneling.