Round Rock, TX, United States of America

Byung Jin Choi

This inventor holds 36 USPTO granted patents and 8 EPO patents, primarily in Imprint Lithography. Top assignees: Molecular Imprints, Inc., The University of Texas System, Canon Nanotechnologies, Inc.. Active years: 2004-2021.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Byung Jin Choi. Retrieved from https://idiyas.com/inventor/byung-jin-choi-xbllsdho

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 83.3

 

Average Co-Inventor Count = 3.7

ph-index = 26

Forward Citations = 2,504(Granted Patents)


Location History:

  • Round Rock, TX (US) (2004 - 2010)
  • Austin, TX (US) (2005 - 2021)

Company Filing History:


Years Active: 2004-2021

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Areas of Expertise:
Nano Imprinting
Template Alignment
Substrate Characteristics
High-Precision Sensing
Roll-to-Roll Lithography
Chucking Systems
Discontinuous Films
High-Resolution Overlay
Fluid Geometries
Macro Motion Translation
Patterning Liquids
Separation Techniques
36 patents (USPTO):Explore Patents

Title: Byung Jin Choi: A Pioneer in Nano-imprint Lithography Innovations

Introduction:

Byung Jin Choi, a seasoned inventor and researcher based in Round Rock, TX, has made significant contributions to the field of nano-imprint lithography. With 36 patents to his name, Choi's expertise lies in developing methodologies and materials that enhance the efficiency and precision of this revolutionary technology. This article will explore Choi's latest patents, career highlights, notable collaborations, and his profound impact on the field of nano-imprint lithography.

Latest Patents:

Choi's most recent patents demonstrate his focus on safe separation during the nano-imprinting process. One such invention is the "Safe separation for nano imprinting - Control of lateral strain and lateral strain ratio (d/d)." This patent discusses techniques for controlling lateral strain and strain ratio between the template and substrate, primarily achieved through the selection of template and/or substrate thicknesses (T and/or T) and template and/or substrate back pressure (P and/or P).

Another notable innovation is Choi's "Porous template and imprinting stack for nano-imprint lithography" patent. This invention introduces a porous material with an average pore size of at least 0.4 nm, possessing a porosity of at least 10%. By incorporating this porous template or imprinting stack, gas trapped between the template and imprinting stack can diffuse rapidly, leading to the rapid formation of a continuous polymerizable layer between them. This advancement greatly advances the efficiency of nano-imprint lithography.

Career Highlights:

Byung Jin Choi's career spans across prestigious institutions such as Molecular Imprints, Inc. and the University of Texas System. During his time at Molecular Imprints, Inc., he made significant contributions to the development of nano-imprint lithography technologies, earning him widespread recognition among his peers and within the industry.

Collaborations:

Throughout his career, Choi has collaborated with esteemed scientists and engineers, making his work even more impactful. Two notable coworkers and collaborators are Sidlgata V Sreenivasan and Michael P C Watts. Their joint efforts have further advanced the field of nano-imprint lithography, leading to breakthroughs that have potential applications in various industries, including microelectronics and nanotechnology.

Conclusion:

Byung Jin Choi's exceptional aptitude for innovation and relentless pursuit of advancing nano-imprint lithography has propelled the field forward. With an impressive portfolio of 36 patents, including his latest contributions to safe separation techniques and the use of porous templates, Choi continues to revolutionize this technology. His work has opened up new possibilities for the manufacturing of nanoscale devices, paving the way for countless future innovations.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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