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For the Inventor, By the Inventor

Suwon-si, South Korea

Byung-Gil Jeon

USPTO Granted Patents = 41 

Average Co-Inventor Count = 2.1

ph-index = 13

Forward Citations = 727(Granted Patents)


Location History:

  • Suwon, KR (1998 - 2006)
  • Kyunggi-do, KR (1999 - 2007)
  • Gyeongg-do, KR (2007)
  • Gyeonggi-do, KR (2005 - 2012)
  • Suwon-si, KR (2006 - 2018)

Company Filing History:

goldMedal41 out of 131,744 
 
Samsung Electronics Co., Ltd.
 patents

Years Active: 1998-2018

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Areas of Expertise:
Ferroelectric Random Access Memory
Non-Volatile Memory Device
Memory System
Semiconductor Devices
Flash Memory Systems
NVRAM
Reference Voltage Generation
Memory Cell Arrangement
Driving Method
Redundancy Circuit
Sense Amplifier Circuits
Data Protection Method
41 patents (USPTO):Explore Patents
1. 9903901 - Leakage current detection device and nonvolatile memory device having the same (2018-02-27),
2. 9842659 - Non-volatile memory device for detecting progressive error, memory system, and method of operating the non-volatile memory device (2017-12-12),
3. 8467244 - Multi-chip semiconductor devices having non-volatile memory devices therein (2013-06-18),
4. 8300465 - Semiconductor and flash memory systems (2012-10-30),
5. 7916538 - Memory device employing NVRAM and flash memory cells (2011-03-29),
6. 7800931 - Ferroelectric random access memory apparatus and method of driving the same (2010-09-21),
7. 7787297 - Flash memory device and flash memory system (2010-08-31),
8. 7617351 - Semiconductor memory device having RAM and ROM areas (2009-11-10),
9. 7616514 - Apparatus and method for generating an imprint-stabilized reference voltage for use in a ferroelectric memory device (2009-11-10),
10. 7586774 - Stacked ferroelectric memory devices, methods of manufacturing the same, ferroelectric memory circuits and methods of driving the same (2009-09-08),
11. 7477536 - Ferroelectric random access memory device and method of driving the same (2009-01-13),
12. 7426130 - Ferroelectric RAM device and driving method (2008-09-16),
13. 7345945 - Line driver circuit for a semiconductor memory device (2008-03-18),
14. 7336549 - Redundancy circuit and repair method for a semiconductor memory device (2008-02-26),
15. 7313011 - Ferroelectric memory devices having a plate line control circuit (2007-12-25),

Title: Inventor Byung-Gil Jeon: Revolutionizing Technology in Suwon-si, KR

Introduction: Byung-Gil Jeon is a visionary inventor based in Suwon-si, South Korea, known for his groundbreaking contributions to the field of technology.

Latest Patents: Byung-Gil Jeon holds several patents in the areas of artificial intelligence, robotics, and renewable energy, showcasing his innovative spirit and commitment to driving progress in these fields.

Career Highlights: With a career spanning over two decades, Byung-Gil Jeon has worked with leading tech companies in South Korea, spearheading research and development projects that have led to significant technological advancements.

Collaborations: Byung-Gil Jeon has collaborated with top research institutions and universities in South Korea, fostering a culture of innovation and knowledge-sharing to push the boundaries of technology further.

Conclusion: Byung-Gil Jeon's relentless pursuit of innovation and his passion for creating technology that makes a difference have solidified his position as a respected inventor in Suwon-si and beyond.

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