The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 26, 2008
Filed:
Sep. 29, 2005
Byung-jun Min, Yongin-si, KR;
Kang-woon Lee, Seoul, KR;
Han-joo Lee, Seoul, KR;
Byung-gil Jeon, Suwon-si, KR;
Byung-Jun Min, Yongin-si, KR;
Kang-Woon Lee, Seoul, KR;
Han-Joo Lee, Seoul, KR;
Byung-Gil Jeon, Suwon-si, KR;
Samsung Electronics Co., Ltd., Suwon-si, KR;
Abstract
A redundancy circuit and repair method for a semiconductor memory device. The redundancy circuit comprises an address buffer for outputting a first internal address and a second internal address (used only during redundancy programming to carry failed memory addresses) based on an external address; and address storage and comparison units, each one of the address storage and comparison units being selected for programming using the second internal address. The address storage and comparison units comprise ferroelectric storage cells that store the address of a defective (failed) main memory cell and outputs a redundancy decoder enable signal in response to a first internal address matching the stored (second internal) address. Accordingly, the redundancy circuit with ferroelectric storage cells and a repair method allows the performance of a second repair when a defective cell is detected after a first repair or after a packaging process.