Yongin, South Korea

Byung-Jun Min

This inventor holds 18 USPTO granted patents, primarily in Ferroelectric Memory Technology. Top assignee: Samsung Electronics Co., Ltd.. Active years: 2005-2013.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Byung-Jun Min. Retrieved from https://idiyas.com/inventor/byung-jun-min

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 44.4

Average Co-Inventor Count = 3.4

ph-index = 7

Forward Citations = 472(Granted Patents)


Location History:

  • Chungcheongnam-do, KR (2006)
  • Yongin, KR (2006)
  • Yongin-si, KR (2006 - 2009)
  • Gyeonggi-do, KR (2005 - 2012)
  • Suwon-si, KR (2009 - 2013)

Company Filing History:


Years Active: 2005-2013

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Areas of Expertise:
Ferroelectric RAM
Nonvolatile Memory
Flash Memory Systems
Memory Device
Semiconductor Devices
Reference Voltage
Driving Method
Redundancy Circuit
Multi-Chip Devices
Burn-In Test Apparatus
NVRAM
RAM and ROM
18 patents (USPTO):Explore Patents

Title: **Byung-Jun Min: Innovating Non-Volatile Memory Technologies**

Introduction

Byung-Jun Min is a prominent inventor based in Yongin-si, South Korea. With an impressive portfolio of 18 patents, he has made significant contributions to the field of non-volatile memory devices. His innovative work has fostered advancements in memory technology that are utilized in various electronic devices.

Latest Patents

Among his notable inventions, Byung-Jun Min's latest patents include a non-volatile memory device using a variable resistive element. This device features a memory cell array with multiple memory cells, a first circuit block for conducting operations on these memory cells, and a second circuit block that performs a distinct operation. Additionally, the design incorporates a redundancy block that enhances reliability by managing repair activities for the memory cells.

Another significant patent pertains to multi-chip semiconductor devices featuring non-volatile memory devices. This invention comprises a flash memory device capable of storing page data and spare data, ensuring efficient data management and retrieval when interfacing with external systems.

Career Highlights

Byung-Jun Min is affiliated with Samsung Electronics Co., Ltd., a leading global player in the electronics industry. His role at this renowned company allows him to leverage his expertise in memory technologies, directly contributing to the ongoing evolution in this sector.

Collaborations

Throughout his career, Byung-Jun Min has collaborated with notable peers such as Byung-Gil Jeon and Kang-Woon Lee. These partnerships highlight a cohesive team dynamic at Samsung Electronics, driving innovative solutions in memory technology and paving the way for future advancements.

Conclusion

Byung-Jun Min's pioneering work in developing non-volatile memory devices exemplifies his commitment to innovation within the semiconductor industry. His continued contributions not only enhance technological capabilities but also position Samsung Electronics as a leader in memory solutions. As the demand for advanced memory technologies grows, inventors like Byung-Jun Min are crucial in shaping the future landscape of the electronics market.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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