The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 13, 2009
Filed:
Nov. 21, 2006
Byung-gil Jeon, Suwon-si, KR;
Kang-woon Lee, Seoul, KR;
Byung-jun Min, Suwon-si, KR;
Han-joo Lee, Seoul, KR;
Byung-Gil Jeon, Suwon-si, KR;
Kang-Woon Lee, Seoul, KR;
Byung-Jun Min, Suwon-si, KR;
Han-Joo Lee, Seoul, KR;
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Abstract
A ferroelectric random access memory (FRAM) device includes a memory cell array including a plurality of FRAM cells connected to a first bit line and a reference cell connected to a second bit line. The device also includes a sense amplifier circuit configured to evaluate an amount of charges induced in a FRAM cell at a first mode and sense data stored in the FRAM cell at a second mode, wherein the sense amplifier circuit comprises a reference voltage generator configured to output an externally applied voltage as a reference voltage at the first mode, and output the reference voltage in response to a voltage applied to the second bit line from the reference cell and a voltage charged to an offset node at the second mode, and an amplifier circuit configured to sense and amplify a difference between a voltage applied to the first bit line from a selected FRAM cell and the reference voltage.