The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 16, 2008
Filed:
Dec. 16, 2004
Byung-gil Jeon, Gyeonggi-do, KR;
Byung-Gil Jeon, Gyeonggi-do, KR;
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Abstract
A ferroelectric RAM (Random Access Memory) device includes at least one memory cell constructed of one access transistor operating by a word line enable signal, and one ferroelectric capacitor connected between a bit line and the access transistor. The device has a cell array structure based on a repeated array of the memory cells. The device also includes a word line driver suitable for a high integration and reducing power consumption. The driving method in the ferroelectric RAM device generates a word line enable signal having a level of power source voltage, to read and write data. The method has advantages of being suitable for a high integration, enhancing an operating speed and reducing power consumption and providing stabilized read and write operations.