The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 12, 2017

Filed:

Feb. 06, 2015
Applicants:

Sang-wan Nam, Hwaseong-si, KR;

Byung-gil Jeon, Suwon-si, KR;

Dae-seok Byeon, Seongnam-si, KR;

Inventors:

Sang-wan Nam, Hwaseong-si, KR;

Byung-gil Jeon, Suwon-si, KR;

Dae-seok Byeon, Seongnam-si, KR;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 11/34 (2006.01); G11C 29/02 (2006.01); G11C 29/12 (2006.01); G11C 29/50 (2006.01);
U.S. Cl.
CPC ...
G11C 29/025 (2013.01); G11C 2029/1202 (2013.01); G11C 2029/5006 (2013.01);
Abstract

Provided are a non-volatile memory device, a memory system, and a method of operating the non-volatile memory device. The method includes: performing a user operation according to at least one mode selected from among a writing mode, a reading mode, and an erasing mode with respect to a memory cell array; setting up voltages of a plurality of word lines; floating at least one word line from among the plurality of word lines, the voltages of which are set up, according to the at least one selected mode; and detecting whether the at least one word line has a progressive defect, according to a result of detecting a voltage level of the at least one floated word line.


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