Yongin, South Korea

Byeong-In Choe

This inventor holds 22 USPTO granted patents and 5 published patent applications, primarily in Nonvolatile Memory Devices. Top assignees: Samsung Electronics Co., Ltd., Samsung Display Co., Ltd.. Active years: 2010-2018.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Byeong-In Choe. Retrieved from https://idiyas.com/inventor/byeong-in-choe

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 22 

% Patents Active = 100.0

Average Co-Inventor Count = 3.7

ph-index = 7

Forward Citations = 160(Granted Patents)


Location History:

  • Gyeonggi-do, KR (2011)
  • YongIn, KR (2012 - 2014)
  • Yongin-si, KR (2010 - 2018)

Company Filing History:


Years Active: 2010-2018

Loading Chart...
Areas of Expertise:
Nonvolatile Memory Device
Flash Memory
Charge Trap Flash
Programming Method
Erasing Method
Vertical Structure
Dummy Memory Cell
Memory System
Ground Select Transistor
Cell Strings
Manufacturing Method
Bias Voltage
22 patents (USPTO):Explore Patents

Title: Innovations by Byeong-In Choe in Semiconductor Technology

Introduction

Byeong-In Choe is a prominent inventor based in Yongin-si, South Korea, known for his contributions to semiconductor technology. With an impressive portfolio of 22 patents, Choe has become a significant figure in the field, pushing the boundaries of innovation in memory devices.

Latest Patents

Among Byeong-In Choe's most recent innovations are two noteworthy patents. The first is a semiconductor memory device, which outlines a sophisticated method of manufacturing a semiconductor device. This method involves forming a laminated structure consisting of sacrificial layers and a select gate layer on a substrate. It further describes creating a penetration region through the laminated structure and developing a select gate insulating layer on the exposed sidewall. An active pattern is then formed in the penetration region, leading to the exposure of a portion of this pattern, followed by the formation of an information storage layer.

The second remarkable patent is for a nonvolatile memory device and its read method. This device enhances reliability by addressing the threshold voltage of a flash memory cell. It features a memory cell array and utilizes a voltage generator to supply appropriate read and program voltages to word lines during operations, ensuring efficient performance.

Career Highlights

Choe has made significant strides in his career by working with leading technology companies such as Samsung Electronics Co., Ltd. and Samsung Display Co., Ltd. His role in these organizations has helped foster advancements in memory technology and has allowed him to contribute substantially to the field of semiconductor innovation.

Collaborations

Throughout his career, Byeong-In Choe has collaborated with talented professionals, including notable coworkers like Woonkyung Lee and Changseok Kang. These partnerships have undoubtedly influenced his inventive processes and have led to enhanced outcomes in industry-specific projects.

Conclusion

Byeong-In Choe's innovative work in semiconductor technology is marked by his impressive patent portfolio and collaborations within the tech industry. As he continues to develop groundbreaking memory devices, Choe solidifies his reputation as a leading inventor in his field, inspiring future advancements in technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Loading…