The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 31, 2017
Filed:
Oct. 20, 2015
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-Do, KR;
Inventors:
Byeong-In Choe, Yongin-si, KR;
Mincheol Park, Seoul, KR;
Dongseog Eun, Seongnam-si, KR;
Eunsuk Cho, Suwon-si, KR;
Assignee:
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/04 (2006.01); G11C 16/14 (2006.01); G11C 7/04 (2006.01); G11C 16/32 (2006.01);
U.S. Cl.
CPC ...
G11C 16/14 (2013.01); G11C 7/04 (2013.01); G11C 16/32 (2013.01);
Abstract
An erase method of a nonvolatile memory device includes applying an erase voltage to a substrate; sensing a temperature of a memory cell array; setting a delay time based on the temperature of the memory cell array, wherein the delay time starts in response to the erase voltage being applied to the substrate; applying a ground voltage to a ground selection line connected to a ground selection transistor during the delay time; and increasing a voltage of the ground selection line after the delay time.