The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 15, 2014

Filed:

Nov. 19, 2012
Applicant:

Samsung Electronics Co., Ltd., Suwon-Si, KR;

Inventors:

Chang-Hyun Lee, Suwon, KR;

Jung-Dal Choi, Suwon, KR;

Byeong-In Choe, Yongin, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/28 (2006.01);
U.S. Cl.
CPC ...
Abstract

Integrated circuit flash memory devices, such as NAND flash memory devices, include an array of regular flash memory cells, an array of dummy flash memory cells and an erase controller. The erase controller is configured to concurrently apply a different predetermined bias voltage to the dummy flash memory cells than to the regular flash memory cells during an erase operation of the integrated circuit flash memory device. Related methods are also described.


Find Patent Forward Citations

Lee, Chang-Hyun. (2014). Flash memory device and operating method for concurrently applying different bias voltages to dummy memory cells and regular memory cells during erasure (U.S. Patent No. 8699274). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8699274

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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