The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 15, 2015
Filed:
Mar. 05, 2013
Byeong-in Choe, Yongin-si, KR;
Jaehoon Jang, Seongnam-si, KR;
Kihyun Kim, Hwaseong-si, KR;
Sunil Shim, Seoul, KR;
Woonkyung Lee, Seongnam-si, KR;
Byeong-In Choe, Yongin-si, KR;
Jaehoon Jang, Seongnam-si, KR;
Kihyun Kim, Hwaseong-si, KR;
Sunil Shim, Seoul, KR;
Woonkyung Lee, Seongnam-si, KR;
Abstract
Methods of operating a nonvolatile memory device may include applying a word line erase voltage to word lines connected to memory cells of the plurality of cell strings, floating ground selection lines connected to ground selection transistors of the plurality of cell strings and string selection lines connected to string selection transistors of the plurality of cell strings, applying a ground voltage to at least one lower dummy word line connected to at least one lower dummy memory cell between memory cells and a ground selection transistor in each of the plurality of cell strings, applying an erase voltage to the substrate, and floating the at least one lower dummy word line after applying of the erase voltage.