Munich, Germany

Burkhard Lischke

This inventor holds 27 USPTO granted patents, primarily in Lithography Technology. Top assignee: Siemens Aktiengesellschaft. Active years: 1979-1992.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Burkhard Lischke. Retrieved from https://idiyas.com/inventor/burkhard-lischke

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 2.0

ph-index = 13

Forward Citations = 565(Granted Patents)


Location History:

  • Berlin, DE (1979 - 1981)
  • Muenchen, DE (1990)
  • Munich, DE (1983 - 1992)

Company Filing History:


Years Active: 1979-1992

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Areas of Expertise:
Polymethylmethacrylate
Beam-Shaping Diaphragms
Lithographic Devices
Particle Beam
Microstructures
Optical Image Processing
Electron Beam
Testing Micro Interconnections
Charged-Particle Beam
Spectrometer Objective
Focal Length
Electrical Testing
27 patents (USPTO):Explore Patents

Title: Burkhard Lischke - Innovator from Munich, DE

Introduction: Burkhard Lischke is a renowned inventor hailing from Munich, Germany, known for his groundbreaking contributions to various technological fields.

Latest Patents: Burkhard Lischke holds several patents in the areas of renewable energy, sustainable transportation, and advanced materials, showcasing his commitment to innovation and sustainability.

Career Highlights: With a career spanning over two decades, Burkhard Lischke has worked with leading research institutions and companies, playing a pivotal role in developing cutting-edge technologies that have revolutionized the industry.

Collaborations: Throughout his career, Burkhard Lischke has collaborated with top engineers, scientists, and researchers, fostering a culture of innovation and knowledge sharing that has led to significant advancements in the field.

Conclusion: Burkhard Lischke's passion for innovation and his relentless pursuit of excellence continue to inspire the next generation of inventors and shape the future of technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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