The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 17, 1991
Filed:
May. 17, 1989
Applicant:
Inventors:
Assignee:
Siemens Aktiengesellschaft, Munich, DE;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G03F / ;
U.S. Cl.
CPC ...
430-5 ; 430321 ; 430323 ; 430324 ; 2505051 ; 2504922 ; 2504923 ;
Abstract
Methods for producing beam shaping diaphragms for lithographic devices in which a silicon layer is epitaxially deposited on a semiconductor body and the epitaxial layer is formed in the central region as a self-supporting membrane and is formed with preferably straight line-shaped quadratic recesses which have perpendicular limiting surfaces. Photolithographic processes and galvanic second-casting techniques may be used in the process for producing the beam-shaping diaphragm. The beam-shaping diaphragm can also be produced in lightly doped epitaxial layers by using electro-chemical etching methods.