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For the Inventor, By the Inventor

Suwon-si, South Korea

Artur Antonyan

USPTO Granted Patents = 27 

Average Co-Inventor Count = 1.1

ph-index = 5

Forward Citations = 79(Granted Patents)


Company Filing History:

goldMedal27 out of 131,500 
 
Samsung Electronics Co., Ltd.
 patents

Years Active: 2015-2025

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27 patents (USPTO):Explore Patents
1. 12237005 - Nonvolatile memory devices that support enhanced power saving during standby modes (2025-02-25),
2. RE50133 - Resistive memory device including reference cell to compensate for a leakage current (2024-09-17),
3. 11514965 - Resistive memory device (2022-11-29),
4. 11488641 - Memory device including variable reference resistor and method of calibrating the variable reference resistor (2022-11-01),
5. 11342036 - Memory device for write operation including verification and operating method thereof (2022-05-24),
6. 11217305 - Nonvolatile memory device and operating method (2022-01-04),
7. 11017829 - Magnetic memory device including voltage generator connected to both word line driver and write driver (2021-05-25),
8. 10964387 - Resistive memory device including reference cell and operating method thereof (2021-03-30),
9. 10910030 - Memory device for reducing leakage current (2021-02-02),
10. 10896709 - Integrated circuit memory device and method of operating same (2021-01-19),
11. 10896699 - Memory devices including switch circuit that operates regardless of power supply voltage (2021-01-19),
12. 10854289 - Resistive memory device providing reference calibration, and operating method thereof (2020-12-01),
13. 10777255 - Control signal generator for sense amplifier and memory device including the control signal generator (2020-09-15),
14. 10762932 - Memory device and operating method of memory device (2020-09-01),
15. 10622066 - Resistive memory device including reference cell and operating method thereof (2020-04-14),

Title: Artur Antonyan: Innovator in Nonvolatile Memory Technology

Introduction

Artur Antonyan is a prolific inventor based in Suwon-si, South Korea, holding an impressive portfolio of 27 patents. His work primarily focuses on advancements in nonvolatile memory devices, which play a crucial role in modern electronics. Antonyan's innovative contributions have significant implications for energy efficiency and performance in memory technology.

Latest Patents

Among his latest patents, Antonyan has developed a nonvolatile memory device that supports enhanced power saving during standby modes. This device includes a memory cell array with nonvolatile memory cells that are electrically connected to multiple word lines and bit lines. The innovation encompasses a sophisticated control logic system designed to optimize power consumption by utilizing both normal and deep standby modes, thereby reducing current flow in low-power conditions.

Another noteworthy invention is a resistive memory device featuring a reference cell that compensates for leakage currents. This device incorporates various components, including word lines, reference cells, and resistive memory cells, arranged to ensure efficient reading and compensation for leakage current, which enhances the reliability of memory operations.

Career Highlights

Artur Antonyan's professional journey is closely associated with Samsung Electronics Co., Ltd., where he has been instrumental in driving innovations in memory technology. His dedication to research and development has not only led to numerous patents but has also established him as a key player in the field of nonvolatile memory solutions.

Collaborations

Throughout his career, Antonyan has collaborated with accomplished colleagues, including Suk-Soo Pyo and Hyun-Taek Jung. These collaborations have fostered an environment of innovation, allowing for the exchange of ideas and expertise that advance the development of cutting-edge memory technologies.

Conclusion

Artur Antonyan continues to be a significant force in the realm of memory technology, with his inventions paving the way for more efficient and effective electronic devices. His work exemplifies the importance of innovation in enhancing the functionality of nonvolatile memory systems, making a lasting impact on the industry.

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