The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 02, 2021
Filed:
Apr. 22, 2019
Samsung Electronics Co., Ltd., Suwon-si, KR;
Samsung Electronics Co. Ltd., Gyeonggi-do, KR;
Abstract
A memory device including a normal memory cell array including a first magneto-resistance memory cell that is connected to a first bit line, a first source line, and a first word line, and configured to receive a selection voltage through the first word line, a monitor memory cell array including a second magneto-resistance memory cell that is connected to a first signal line and a second signal line, a gate of a cell transistor of which is configured to receive a non-selection voltage, and a body bias generator configured to sense a leakage current flowing through the first signal line and control a body voltage provided to each of a body of a cell transistor of the first magneto-resistance memory cell and a body of the cell transistor of the second magneto-resistance memory cell based on the leakage current may be provided.