The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 01, 2020
Filed:
Jun. 06, 2019
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Inventor:
Artur Antonyan, Suwon-si, KR;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 5/14 (2006.01); G11C 16/30 (2006.01); G11C 7/22 (2006.01); G11C 7/12 (2006.01); G11C 29/02 (2006.01); G11C 11/16 (2006.01); G11C 8/08 (2006.01); G11C 8/10 (2006.01);
U.S. Cl.
CPC ...
G11C 5/145 (2013.01); G11C 5/147 (2013.01); G11C 7/12 (2013.01); G11C 7/22 (2013.01); G11C 8/08 (2013.01); G11C 8/10 (2013.01); G11C 11/1657 (2013.01); G11C 11/1673 (2013.01); G11C 11/1675 (2013.01); G11C 11/1697 (2013.01); G11C 16/30 (2013.01); G11C 29/021 (2013.01); G11C 29/028 (2013.01);
Abstract
A memory device includes a memory cell array that includes memory cells, a row decoder that is connected to the memory cell array through word lines, a column decoder that is connected to the memory cell array through bit lines and source lines, a write driver that transfers a write voltage to a bit line, which is selected by the column decoder, from among the bit lines by using a gate voltage in a write operation, and control logic that generates the gate voltage. The gate voltage is higher than the write voltage.