The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 29, 2022

Filed:

May. 25, 2021
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventor:

Artur Antonyan, Suwon-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/16 (2006.01);
U.S. Cl.
CPC ...
G11C 11/1697 (2013.01); G11C 11/161 (2013.01); G11C 11/1659 (2013.01); G11C 11/1675 (2013.01); G11C 11/1657 (2013.01);
Abstract

A resistive memory device is provided. The resistive memory device includes a bitline, a source line, a memory cell electrically connected to the bitline and the source line by a first switch, a first transistor electrically connected to the bitline, a second transistor electrically connected to the source line, a gate voltage generator configured to generate a first gate voltage that is provided to a gate electrode of the first transistor, and configured to generate a second gate voltage that is provided to a gate electrode of the second transistor and a second switch that provides the first and second gate voltages to the gate electrodes of the first and second transistors.


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