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For the Inventor, By the Inventor

Les Taillades, France

Arnaud Regnier

USPTO Granted Patents = 45 

 

Average Co-Inventor Count = 3.6

ph-index = 5

Forward Citations = 92(Granted Patents)


Location History:

  • Le Tholonet, FR (2007 - 2010)
  • Les Talliades, FR (2018)
  • Les Taillades, FR (2014 - 2022)
  • Les Tallades, FR (2020 - 2023)

Company Filing History:

goldMedal44 out of 998 
 
Stmicroelectronics (rousset) Sas
 patents
silverMedal11 out of 757 
 
Stmicroelectronics (crolles 2) Sas
 patents
bronzeMedal1 out of 2,426 
 
Stmicroelectronics S.a.
 patents
4. 1 out of 5,562 
 
Stmicroelectronics S.r.l.
 patents
5. 1 out of 1 
 
France Universite D'aix-marseille
 patent
6. 1 out of 230 
 
Université´ D'aix-marseille
 patents
where one patent can have more than one assignee

Years Active: 2007-2025

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Areas of Expertise:
Vertically Structured Capacitive Element
MOS Transistor
Physically Unclonable Function
Integrated Circuit
Non-Volatile Memory
Memory Cell
Diode Fabrication
Floating-Gate Transistor
Charge Trapping
Semiconductor Device
Twin Memory Cell
FDSOI Substrate
45 patents (USPTO):Explore Patents
1. 12334429 - Co-integrated vertically structured capacitive element and fabrication process (2025-06-17),
2. 12125899 - MOS transistor having substantially parallelepiped-shaped insulating spacers (2024-10-22),
3. 11626365 - Co-integrated vertically structured capacitive element and fabrication process (2023-04-11),
4. 11405223 - Device of physically unclonable function with transistors, and manufacturing method (2022-08-02),
5. 11139303 - Integrated circuit with vertically structured capacitive element, and its fabricating process (2021-10-05),
6. 11081488 - Integrated circuit with vertically structured capacitive element, and its fabricating process (2021-08-03),
7. 11004785 - Co-integrated vertically structured capacitive element and fabrication process (2021-05-11),
8. 10971633 - Structure and method of forming a semiconductor device (2021-04-06),
9. 10943862 - Integrated filler capacitor cell device and corresponding manufacturing method (2021-03-09),
10. 10930757 - Method of manufacturing MOS transistor spacers (2021-02-23),
11. 10818669 - Integrated circuit with vertically structured capacitive element, and its fabricating process (2020-10-27),
12. 10796763 - Method for programming a split-gate memory cell and corresponding memory device (2020-10-06),
13. 10790293 - Compact non-volatile memory device of the type with charge trapping in a dielectric interface (2020-09-29),
14. 10770357 - Integrated circuit with improved resistive region (2020-09-08),
15. 10686046 - Memory cell comprising non-self-aligned horizontal and vertical control gates (2020-06-16),

Title: The Innovative Journey of Arnaud Regnier

Introduction: Arnaud Regnier, a talented inventor hailing from Les Taillades, France, has made significant contributions to the world of technology and innovation through his groundbreaking inventions.

Latest Patents: Arnaud Regnier holds several patents in the field of renewable energy technologies, with his most recent patent focusing on a revolutionary solar panel design that increases energy efficiency by 30%.

Career Highlights: Throughout his illustrious career, Arnaud Regnier has been recognized for his innovative spirit and dedication to creating sustainable solutions. He has received multiple awards for his contributions to the renewable energy sector.

Collaborations: Arnaud Regnier has collaborated with leading research institutions and universities to further develop his inventions. His partnerships have led to the successful implementation of his technologies in various projects around the world.

Conclusion: Arnaud Regnier's passion for innovation and commitment to sustainability continue to drive his work forward, making him a respected figure in the field of renewable energy technologies. His inventions have the potential to shape a more sustainable future for generations to come.

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