The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 06, 2020
Filed:
Jan. 24, 2019
Stmicroelectronics (Rousset) Sas, Rousset, FR;
Stmicroelectronics (Crolles 2) Sas, Crolles, FR;
Francesco La Rosa, Rousset, FR;
Marc Mantelli, Fuveau, FR;
Stephan Niel, Meylan, FR;
Arnaud Regnier, Les Tallades, FR;
STMicroelectronics (Rousset) SAS, Rousset, FR;
STMicroelectronics (Crolles 2) SAS, Crolles, FR;
Abstract
A split-gate memory cell includes a state transistor possessing a control gate and a floating gate and a selection transistor possessing a selection gate. The split-gate memory cell is programmed by applying, during a programming duration, a first voltage to the control gate, a second voltage to a drain of the state transistor and a third voltage to the selection gate of the selection transistor. The third voltage is transitioned during the programming duration between a first value and a second value greater than the first value.