The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 16, 2020
Filed:
Jul. 16, 2019
Applicant:
Stmicroelectronics (Rousset) Sas, Rousset, FR;
Inventors:
Francesco La Rosa, Rousset, FR;
Stephan Niel, Meylan, FR;
Arnaud Regnier, Les Taillades, FR;
Julien Delalleau, Marseilles, FR;
Assignee:
STMicroelectronics (Rousset) SAS, Rousset, FR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/788 (2006.01); H01L 29/423 (2006.01); H01L 21/28 (2006.01); H01L 29/66 (2006.01); H01L 27/11521 (2017.01); G11C 16/04 (2006.01); G11C 16/14 (2006.01); H01L 21/3205 (2006.01); H01L 21/3213 (2006.01); H01L 27/11524 (2017.01); H01L 29/78 (2006.01); H01L 21/306 (2006.01);
U.S. Cl.
CPC ...
H01L 29/42328 (2013.01); G11C 16/0425 (2013.01); G11C 16/14 (2013.01); H01L 21/30604 (2013.01); H01L 21/32051 (2013.01); H01L 21/32133 (2013.01); H01L 27/11521 (2013.01); H01L 27/11524 (2013.01); H01L 29/40114 (2019.08); H01L 29/42336 (2013.01); H01L 29/66666 (2013.01); H01L 29/66825 (2013.01); H01L 29/788 (2013.01); H01L 29/7827 (2013.01); H01L 29/7881 (2013.01); H01L 29/7883 (2013.01); H01L 29/7885 (2013.01);
Abstract
The present disclosure relates to a memory cell comprising a vertical selection gate extending in a trench made in a substrate, a floating gate extending above the substrate, and a horizontal control gate extending above the floating gate, wherein the floating gate also extends above a portion of the vertical selection gate over a non-zero overlap distance. Application mainly to the production of a split gate memory cell programmable by hot-electron injection.