Seoul, South Korea

An Bae Lee

This inventor holds 4 USPTO granted patents and 1 published patent application. Top assignee: Hynix Semiconductor Inc.. Active years: 2009-2010.

IDiyas Innovation Intelligence. (2026). Inventor Profile: An Bae Lee. Retrieved from https://idiyas.com/inventor/an-bae-lee

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 4 

% Patents Active = 25.0

Average Co-Inventor Count = 4.0

ph-index = 2

Forward Citations = 17(Granted Patents)


Company Filing History:


Years Active: 2009-2010

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4 patents (USPTO):Explore Patents

Title: An Bae Lee: Innovator in Semiconductor Technology

Introduction

An Bae Lee is a prominent inventor based in Seoul, South Korea. He has made significant contributions to the field of semiconductor technology, holding a total of 4 patents. His work focuses on innovative methods for fabricating semiconductor devices, which are crucial for modern electronics.

Latest Patents

One of his latest patents is a method for fabricating a semiconductor memory device. This method includes several steps, such as forming a lower conductive layer over a semiconductor substrate and creating an insulation layer above it. The process involves etching the insulation layer to form a contact hole, which exposes a portion of the lower conductive layer. A contact plug is then formed in the contact hole, followed by doping the contact plug through a plasma doping process while varying the temperature of regions in the semiconductor substrate. Finally, an upper conductive layer is formed, connecting with the lower conductive layer through the contact plug.

Another notable patent by An Bae Lee is a method for fabricating a transistor in a semiconductor device utilizing an etch stop layer pattern as a dummy pattern for gate electrode formation. This method includes forming an etch stop layer pattern over a semiconductor substrate and covering it with a semiconductor layer. A recess trench is created by etching the semiconductor layer pattern, which exposes the upper surface of the etch stop layer pattern. The etch stop layer pattern is then removed from the recess trench, and a gate is formed to fill the trench.

Career Highlights

An Bae Lee is currently employed at Hynix Semiconductor Inc., a leading company in the semiconductor industry. His work at Hynix has allowed him to contribute to cutting-edge technologies that enhance the performance and efficiency of semiconductor devices.

Collaborations

He has collaborated with several talented individuals in his field, including Yong Seok Eun and Su Ho Kim. These collaborations have fostered innovation and have led to advancements in semiconductor technology.

Conclusion

An Bae Lee is a distinguished inventor whose work in semiconductor technology has made a significant impact on the industry. His innovative methods and collaborations continue to drive advancements in this critical field.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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