The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 14, 2010
Filed:
Oct. 28, 2008
Applicants:
Yong Seok Eun, Seongnam-si, KR;
Su Ho Kim, Icheon-si, KR;
An Bae Lee, Seoul, KR;
Hye Jin Seo, Icheon-si, KR;
Inventors:
Yong Seok Eun, Seongnam-si, KR;
Su Ho Kim, Icheon-si, KR;
An Bae Lee, Seoul, KR;
Hye Jin Seo, Icheon-si, KR;
Assignee:
Hynix Semiconductor Inc., Icheon-si, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
Abstract
Provided is a method for fabricating a transistor in a semiconductor device. The method includes forming an etch stop layer pattern over a semiconductor substrate; forming a semiconductor layer for covering the etch stop layer pattern; forming a recess trench that exposes an upper surface of the etch stop layer pattern by etching the semiconductor layer pattern; removing the etch stop layer pattern exposed in the recess trench; and forming a gate that fills the recess trench.