The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 25, 2010
Filed:
Dec. 29, 2006
Yong Seok Eun, Seongnam-si, KR;
Su Ho Kim, Icheon-si, KR;
An Bae Lee, Seoul, KR;
Hai Won Kim, Icheon-si, KR;
Yong Seok Eun, Seongnam-si, KR;
Su Ho Kim, Icheon-si, KR;
An Bae Lee, Seoul, KR;
Hai Won Kim, Icheon-si, KR;
Hynix Semiconductor Inc., Icheon-si, KR;
Abstract
A method for manufacturing a semiconductor device having recess gates includes forming an etch stop film on a semiconductor substrate; forming an etch stop film pattern selectively exposing the semiconductor substrate by patterning the etch stop film; forming a semiconductor layer on the semiconductor substrate; forming a hard mask film pattern exposing regions, for forming trenches for recess gates, on the semiconductor substrate; removing the semiconductor layer using the hard mask film pattern as a mask until the etch stop film pattern is exposed; forming the trenches for recess gates by removing the etch stop film pattern from the semiconductor substrate; and forming gate stacks, each of which is formed in the corresponding one of the trenches for recess gates.