Hynix Semiconductor Inc.

An Bae Lee

Yong Seok Eun

Su Ho Kim

Hye Jin Seo

Seung Woo Jin

Yong Soo Joung

Hai Won Kim

Young Hwan Joo

A method for fabricating a semiconductor memory device includes: forming a lower conductive layer over a semiconductor substrate; forming an insulation layer over the lower conductive layer; etching the insulation layer to form a contact hole that exposes a portion of the lower conductive layer; forming a contact plug in the contact hole; doping the contact plug by performing a plasma doping process while varying a temperature of regions the semiconductor substrate; and forming an upper conductive layer connected with the lower conductive layer through the contact plug.

Method for fabricating semiconductor memory device

Provided is a method for fabricating a transistor in a semiconductor device. The method includes forming an etch stop layer pattern over a semiconductor substrate; forming a semiconductor layer for covering the etch stop layer pattern; forming a recess trench that exposes an upper surface of the etch stop layer pattern by etching the semiconductor layer pattern; removing the etch stop layer pattern exposed in the recess trench; and forming a gate that fills the recess trench.

Method for fabricating transistor in a semiconductor device utilizing an etch stop layer pattern as a dummy pattern for the gate electrode formation

A method for manufacturing a semiconductor device having recess gates includes forming an etch stop film on a semiconductor substrate; forming an etch stop film pattern selectively exposing the semiconductor substrate by patterning the etch stop film; forming a semiconductor layer on the semiconductor substrate; forming a hard mask film pattern exposing regions, for forming trenches for recess gates, on the semiconductor substrate; removing the semiconductor layer using the hard mask film pattern as a mask until the etch stop film pattern is exposed; forming the trenches for recess gates by removing the etch stop film pattern from the semiconductor substrate; and forming gate stacks, each of which is formed in the corresponding one of the trenches for recess gates.

Method for manufacturing semiconductor device having recess gate

Disclosed herein is a method for fabricating a semiconductor memory device that can prevent oxidation of bit lines when forming an interlayer dielectric for isolating the bit lines. The bit line is formed on a semiconductor substrate where an underlying structure is formed. A silicon on dielectric (SOD) layer is formed on the resulting structure where the bit line is formed. A heat treatment can be performed on the SOD layer with a partial pressure ratio of water vapor (HO) to hydrogen (H) in a range of about 1&#xd7;10to about 1.55 at a temperature in a range of about 600&#xb0; C. to about 1,100&#xb0; C.

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Seoul, South Korea

An Bae Lee