Albert Chin

Title: Albert Chin: Innovator in Flash Memory Technology

Introduction

Albert Chin is a prominent inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of flash memory technology, holding a total of 7 patents. His innovative work has led to advancements that enhance the performance and efficiency of memory devices.

Latest Patents

Chin's latest patents include groundbreaking developments in flash memory. One notable invention is a MONOS Charge-Trapping flash (CTF) that features a record-thin 3.6 nm Equivalent-Nitride-Thickness (ENT) trapping layer. This device boasts a large 3.1 V 10-year extrapolated retention window at 125°C and excellent endurance at a fast 100 µs with ±16 V program/erase. The use of As-implanted higher κ trapping layer with a deep 5.1 eV work-function of As significantly improves retention compared to un-implanted devices, which only achieve a 1.9 V retention window. Additionally, Chin has developed a MoN—[SiO—LaAlO]—[Ge—HfON]—[LaAlO—SiO]—Si CTF device, which has a record-thin 2.5-nm ENT trapping layer and impressive performance metrics, including a 4.4 V initial memory window and a 3.6 V endurance window at 10 cycles.

Another significant patent involves resistive random access memory (RRAM) utilizing stacked dielectrics. This innovation achieves a setting power of only 4 µW and an ultra-low reset power of 2 nW, along with excellent cycling endurance up to 5×10^6 cycles. The Ni/GeO/nano-crystal-TiO/TaON/TaN RRAM device demonstrates endurance that is orders of magnitude greater than existing flash memory, making it suitable for portable SSDs and potential applications in data centers.

Career Highlights

Albert Chin has worked with esteemed organizations, including National Yang Ming Chiao Tung University and Taiwan Semiconductor Manufacturing Company. His experience in these institutions has allowed him to collaborate with leading experts in the field and contribute to cutting-edge research.

Collaborations

Chin has collaborated with notable colleagues such as Ming-Tsong Wang and Tong-Chern Ong. These partnerships have further enriched his research and development efforts