The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 17, 2012
Filed:
Aug. 17, 2007
Donald Y. Chao, Hsin-Chu, TW;
Albert Chin, Hsin-Chu, TW;
Ping-fang Hung, Hsin-Chu, TW;
Fong-yu Yen, Taoyuan, TW;
Kang-cheng Lin, Yonghe, TW;
Kuo-tai Huang, Hsin-Chu, TW;
Donald Y. Chao, Hsin-Chu, TW;
Albert Chin, Hsin-Chu, TW;
Ping-Fang Hung, Hsin-Chu, TW;
Fong-Yu Yen, Taoyuan, TW;
Kang-Cheng Lin, Yonghe, TW;
Kuo-Tai Huang, Hsin-Chu, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Abstract
A semiconductor structure includes a refractory metal silicide layer; a silicon-rich refractory metal silicide layer on the refractory metal silicide layer; and a metal-rich refractory metal silicide layer on the silicon-rich refractory metal silicide layer. The refractory metal silicide layer, the silicon-rich refractory metal silicide layer and the metal-rich refractory metal silicide layer include same refractory metals. The semiconductor structure forms a portion of a gate electrode of a metal-oxide-semiconductor device.