The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 13, 2010
Filed:
Jul. 08, 2008
Albert Chin, LuJhou Township, Kaohsiung County, TW;
Albert Chin, LuJhou Township, Kaohsiung County, TW;
National Chiao Tung University, Hsinchu, TW;
Abstract
This invention proposes a method for making very low threshold voltage (V) metal-gate/high-κ CMOSFETs using novel self-aligned low-temperature ultra shallow junctions with gate-first process compatible with VLSI. At 1.2 nm equivalent-oxide thickness (EOT), good effective work-function of 5.3 and 4.1 eV, low Vof +0.05 and 0.03 V, high mobility of 90 and 243 cm/Vs, and small 85° C. bias-temperature-instability <32 mV (10 MV/cm, 1 hr) are measured for p- and n-MOS.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile