The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 16, 2014
Filed:
Dec. 01, 2011
Albert Chin, Hsinchu, TW;
Chun-yang Tsai, Hsinchu, TW;
Albert Chin, Hsinchu, TW;
Chun-Yang Tsai, Hsinchu, TW;
National Chiao Tung University, Hsinchu, TW;
Abstract
A MONOS Charge-Trapping flash (CTF), with record thinnest 3.6 nm ENT trapping layer, has a large 3.1 V 10-year extrapolated retention window at 125° C. and excellent 10endurance at a fast 100 μs and ±16 V program/erase. This is achieved using As-implanted higher κ trapping layer with deep 5.1 eV work-function of As. In contrast, the un-implanted device only has a small 10-year retention window of 1.9 V at 125° C. A MoN—[SiO—LaAlO]—[Ge—HfON]—[LaAlO—SiO]—Si CTF device is also provided with record-thinnest 2.5-nm Equivalent-SiN-Thickness (ENT) trapping layer, large 4.4 V initial memory window, 3.2 V 10-year extrapolated retention window at 125° C., and 3.6 V endurance window at 10cycles, under very fast 100 μs and low ±16 V program/erase. These were achieved using Ge reaction with HfON trapping layer for better charge-trapping and retention.